HCI and NBTI Reliability Simulation for 45nm CMOS using Eldo

摘要

Technology scaling on CMOS transistor causes the reliability issues is the main concern by most researchers. HCI and NBTI are the main effects that degrade the CMOS transistor. An analysis of different stages for ring oscillator is analyzed based on HCI and NBTI effect. The acceptable supply voltage for CMOS transistor also analyzed for designer to set the limitation of operational voltage for their design. Eldo simulation shows that the HCI and NBTI degradation on CMOS are stable for 11 and 23 stages of ring oscillator.