CMOS Technology with Integrated Carbon-Nanotube Contact Plugs

摘要

Although CMOS compatible CNT process in interconnect technology has been proposed [1], integration to a working active device has yet to be demonstrated. CNT synthesis in existing works employ the use of Ti-based substrate using Ni catalyst [2]. Nevertheless, the use of CNTs as MOSFET contact plugs in advanced technology node require the synthesis of CNTs on nickel silicided (NiSi) source and drain region [3]. Thus, in this paper, a CMOS compatible integration process of CNT contact plug to a MOSFET is proposed. The challenge of growing CNT from NiSi substrate is addressed using interfacial layer using Ni based catalyst. The performance of CNT vias integrated with a MOSFET is evaluated in terms of via resistance and IV characteristics.