Doping-free complementary inverter enabled by 2D WSe2 electrostatically-doped reconfigurable transistors

摘要

Amongst 2-dimensional (2D) semiconductors of the transition-metal di-chalcogenide (TMDC) family [1], tungsten diselenide (WSe2) has shown ambipolar behavior [2], [3] coupled with high carrier mobility [4] and CMOS-like devices have been experimentally demonstrated using chemical doping of the material [5], [6]. However, since chemical doping is often non-compatible with conventional CMOS processes and is limited by the desorption of the chemical species used [5]–[7], we explore the possibilities offered by electrostatic doping. Here, we exploit the presence of Schottky barrier contacts in WSen2n, and using electrostatic doping we achieve dynamic control of the polarity of the transistors. We fabricate, for the first time on a 2D material, a doping-free complementary inverter, providing a path for the realization of CMOS logic with a single ambipolar, undoped 2D semiconducting material.