High-Performance Hybrid Complementary Inverter with N-Type InGaZnO and P-Type WSe2 Thin-Film Transistors

摘要

In this paper, we introduce a novel hybrid complementary logic inverter with an n-type amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) and a p-type tungsten diselenide (WSe2) TFT, aiming at future applications in logic circuits. The implemented hybrid inverter exhibits full-swing characteristics, and displays high electrical performances, with a large voltage gain of similar to 27.2 V/V. It also exhibits good noise margins, which are close to one-half of the supply voltage (V-DD) of V-DD = 5 V. The experimental results demonstrate the feasibility of realizing the high-performance transition metal dichalcogenides-oxide hybrid complementary logic circuits.