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SOTB (Silicon on Thin Buried Oxide): More than Moore technology for IoT and Automotive

机译:SOTB(薄埋氧化硅):物联网和汽车领域的摩尔技术不止

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摘要

Ultra low power performance is indispensable for Micro Controller Unit (MCU) used as wireless sensor and communication nodes which needs battery maintenance free and energy harvesting operation in the Internet of things (IoT) era. The Silicon on Thin Buried Oxide (SOTB) is one of the most suitable CMOS technology for ultra low power MCU because of its small variability and back bias controllability. This paper describes the mechanism of ultra low power performance of SOTB, performance demonstration of transistor, SRAM and MCU test chip, and what SOTB will realize for IoT and Automotive. SOTB will have less than 1/10 of power efficiency by low leakage current at standby mode and low current consumption at operation mode which today's technology cannot realize.
机译:对于用作无线传感器和通信节点的微控制器单元(MCU)来说,超低功耗性能是必不可少的,它在物联网(IoT)时代不需要电池维护和能量收集操作。薄埋氧化硅(SOTB)由于具有较小的可变性和反向偏置可控性,因此是超低功耗MCU最适合的CMOS技术之一。本文介绍了SOTB超低功耗性能的机制,晶体管,SRAM和MCU测试芯片的性能演示,以及SOTB将为物联网和汽车行业实现的目标。 SOTB将通过待机模式下的低泄漏电流和工作模式下的低电流消耗实现不到1/10的电源效率,这是当今技术无法实现的。

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