Novel top-down Cu filling of through silicon via (TSV) in 3-D integration

摘要

A novel Cu through silicon via (TSV) fabrication process without chemical mechanical polishing, temporary bonding, and de-bonding processes was presented. The study uses the new process to successfully manufacture the flat copper and copper pillar on the two sides respectively. Cu uniformly filled in each TSV, whose average resistance was about 0.55 m¿¿. The resistance characteristic of the copper matches the theory value.