High-quality 100/150 mm p-type 4H-SiC epitaxial wafer for high-voltage bipolar devices

摘要

Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. This paper presents a high-quality 100/150 mm p-type 4H-SiC epitaxial wafer prepared by chemical vapor deposition; this wafer is suitable for high-voltage bipolar device applications. The density of killer defects for bipolar devices including downfalls, triangular-shaped defects, and basal plane dislocations (BPDs), is less than 0.1 cm−2 in the proposed 100 mm n/p multilayer epitaxial wafer. The in-plane thickness and doping uniformity ((max-min)/average)) of the 150 mm p-layer is 3.0% and 11.0%, respectively. The doping concentration of the p-layer can be controlled in the 1E+16 cm−3 to 1E+19 cm−3 range.