Variations in photoluminescence properties of GaN-based thin films directly grown on an amorphous quartz glass substrate

摘要

Photoluminescence properties of gallium nitride-based thin films directly grown on an amorphous quartz glass substrate are investigated. The films are grown by a molecular beam epitaxy apparatus having dual radio-frequency nitrogen plasma cells. Effects of impurity doping, and/or a small amount of indium incorporation by simultaneous operation of the dual nitrogen plasma cells on the photoluminescence properties are discussed. Each of the above processes has brought large enhancements into their photoluminescence intensities respectively though the peak wavelengths are different one another.