DIEF, University of Modena and Reggio Emilia, Italy;
DIEF, University of Modena and Reggio Emilia, Italy;
DIEF, University of Modena and Reggio Emilia, Italy;
IMEC, Leuven, Belgium;
IMEC, Leuven, Belgium;
IMEC, Leuven, Belgium;
DISMI, University of Modena and Reggio Emilia, Italy;
Logic gates; Electron traps; Semiconductor device measurement; MOSFET; Indium gallium arsenide; Capacitance; Hysteresis;
机译:界面陷阱和边界陷阱对InGaAs MOSFET中电流-电压,电容-电压和Split-CV迁移率测量的影响
机译:突出栅极氧化术中突出型氧化物捕获中MOSFET中的移动性提取的新技术:应用于InGaAs MOSFET
机译:InGaAs量子阱MOSFET从弹道型到扩散型的电阻和迁移率分析
机译:边界陷阱对IngaAs量子阱MOSFET转移曲线滞后和分裂式CV移动性测量的影响
机译:存在高κ栅极绝缘体的块状Si NMOSFET中的电子传输:电荷俘获和迁移率
机译:接口陷阱诱导温度依赖性滞后和移动性
机译:接口和边界陷阱对IngaAs MOSFET中电流电压,电容 - 电压和分裂 - CV移动性测量的影响