A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature,High-Frequency Applications

摘要

In this paper, a high-temperature, high-frequency,rnwire-bond-based multichip phase-leg module was designed, fabricated,rnand fully tested. Using paralleled Silicon Carbide (SiC)rnMOSFETs, the module was rated at 1200 V and 60 A, and was designedrnfor a 25-kW three-phase inverter operating at a switchingrnfrequency of 70 kHz, and in a harsh environment up to 200 ◦C,rnfor aircraft applications. To this end, the temperature-dependentrncharacteristics of the SiC MOSFET were first evaluated. The resultsrndemonstrated the superiority of the SiC MOSFET in bothrnstatic and switching performances compared to Si devices, butrnmeanwhile did reveal the design tradeoff in terms of the device’srngate oxide stability. Various high-temperature packaging materialsrnwere then extensively surveyed and carefully selected for thernmodule to sustain the harsh environment. The electrical layoutrnof the module was also optimized using a modeling and simulationrnapproach, in order to minimize the device parasitic ringingrnduring high-speed switching. Finally, the static and switching performancesrnof the fabricated module were tested, and the 200 ◦Crncontinuous operation of the SiC MOSFETs was verified.