S6-G4: High injection and efficiency droop in GaInN light-emitting diodes

摘要

An evident correlation between the high injection and the efficiency droop is demonstrated in GaInN light-emitting diodes (LEDs) for temperature ranging from 80K to 450K. For this temperature range, the efficiency droop has the same thermal tendency with the high injection, i.e. the onset shifts to lower voltage and higher current with increasing temperature. The voltage difference between two onsets mainly falls on the resistive p-type region and induces strong electric field to enable electron drift leakage and the resulting efficiency droop.