Identifying the cause of the efficiency droop in GaInN light-emitting diodes by correlating the onset of high injection with the onset of the efficiency droop

摘要

An unequivocal correlation between the onset of high injection and the onset of the efficiency droop is demonstrated in GaInN light-emitting diodes over a wide range of temperatures. The diode voltage at the onset of high injection and the voltage at the onset of the efficiency droop are correlated by the equation VHigh-injection onset + ΔV ≈ VDroop onset. The excess voltage, ΔV, determined to be 0.3?V, drops partially over the p-type neutral region. The resulting electric field sweeps electrons out of the active region and results in substantial electron leakage despite high barriers that confine the carriers to the active region.