S2-T6: Microchannel cooled, high power GaN-on-Diamond MMIC

摘要

In this work, we report on an innovative approach which integrates GaN-on-Diamond microstrip MMICs with a state-of-the-art microchannel cooler and provides a significant thermal advantage for high power GaN applications. Specifically, we describe efforts to develop a wide bandwidth, GaN-on-Diamond MMIC power amplifier that achieves greater than 3x RF power density compared to GaN on SiC while operating at a MMIC heat flux of >1kW/cm and maintaining junction temperatures below the estimated targets to achieve 10 hrs lifetime by employing a high performance, liquid phase, microchannel cooler capable of a volumetric heat dissipation rate of >10kW/cm. To date, no prior work has been reported for GaN-on-Diamond microstrip MMICs.