Effect of Al-0.5Cu thin film on reliability of IGBT module

摘要

As the major unit of the electrical energy transformations device, IGBT (Insulated Gate Bipolar Transistor) determines the lifetime of the power device immediately. IGBT module is normally made up of chip, DBC (Direct Bonded Copper), substrate and bonding wire, Due to the different CTE(Coefficient of Thermal Expansion), thermal stress occurs when IGBT module works. which leads to device failure. In this research, a FEA (Finite Element Analysis) simulation has been used to estimate the influence of Al-Cu thin film to the thermal stress of bonding wire. Based on coupled thermal-mechanical simulation, the stress caused by CTE is calculated to analysis the temperature distribution in thermal loading process. By using this method, the influence of Al-Cu thin film on reliability of bond wire is investigated. The results show that insertion of Al-0.5%Cu thin film can improve the reliability of bond wire.