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Reliability enhancement of ultra-thin chip assembly module in 3D-ICs integrations by the assistance of molding compounds

机译:借助模塑化合物,增强了3D-IC集成中超薄芯片组装模块的可靠性

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摘要

Three-dimensional integrated circuits (3D-ICs) packaging has attracted a lots of attentions due to it has advantages of integrating heterogeneous functions among stacked chips. The thermal mismatch stresses with regard to interconnects composed through silicon via (TSV) and microbump induced by thermal cycling loads becomes a serious concern while a thinner stacked die thickness is required. To shrink the foregoing thickness less than 10 μm, a novel assembly approach assisted with the use of pre-stuffed molding material at the wafer-level grinding process is proposed in this research. In addition, parametric estimations of the induced stress/strain from the geometries of fine-pitch TSVs under temperature cycling loads is also performed by using a non-linear finite element analysis. As silicon chip is thick, the capability of stress released mechanism for the TSV and microbump is found to depend upon the adoption of underfill material with the proper selection of its elastic modulus. By contrast, the non-linear stress/strain at the entire interconnects of 3D-ICs package with extreme thin stacked chips reduce since the excellent flexibility provided by silicon chip is elaborated. The examined results presented in this study are valuable to the configuration designs and the feasibility of 3D-ICs package with thin stacked chips utilized the proposed assembly approach.
机译:三维集成电路(3D-IC)封装由于具有在堆叠芯片之间集成异构功能的优势而备受关注。当需要更薄的堆叠管芯厚度时,关于由硅通孔(TSV)构成的互连和由热循环负载引起的微凸点的热失配应力成为一个严重问题。为了将上述厚度收缩至小于10μm,本研究提出了一种新颖的组装方法,该方法在晶片级研磨工艺中辅助使用预填充的成型材料。此外,还可以通过使用非线性有限元分析,根据温度循环负载下的细间距TSV的几何形状,对感应应力/应变进行参数估计。由于硅芯片很厚,因此发现硅通孔和微凸点的应力释放机制的能力取决于采用底部填充材料并适当选择其弹性模量。相比之下,由于精心设计了由硅芯片提供的出色的柔韧性,减少了具有极薄堆叠芯片的3D-IC封装的整个互连的非线性应力/应变。在这项研究中提出的检查结果对于配置设计以及采用拟议的组装方法的薄堆叠芯片3D-IC封装的可行性非常有价值。

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