Fluoride-plasma-treated bimodal-gate-oxide ALGaN/GaN MOSHEMT for normally-off operation

摘要

High-performance enhancement-mode (E-mode) AlGaN / GaN MOSHEMT has been achieved by CF4 plasma treatment and bimodal-gate-oxide deposition scheme. ALD-Al2O3 is utilized to prevent deep F⁻ ion implantation into the 2DEG channel, while sputtered-SiO2, is employed to suppress the plasma-induced leakage current and increase the gate swing. Compared with the depletion-mode counterpart, thus-fabricated E-mode MOSHEMT exhibited 2.56 V shift in Vth, but only 8% degradation in Imax, demonstrating the promise of the bimodal-gate-oxide scheme for realizing E-mode operation of GaN-based MOSHEMTs.