Normally-off operation in AlGaN/GaN/AlGaN double heterojunction field effect transistors

摘要

Nearly normally-off operation of the GaN-based heterojunction field effect transistors was obtained using AlGaN/GaN/AlGaN double heterojunction channel. The aluminum compositions of the AlGaN heterobar-riers are designed so as to deplete the electron carrier in the AlGaN/GaN/AlGaN channel, which gives the threshold gate voltage of about 0 V. The maximum drain current density was over 170 mA/mm.