A simulation-based study of gate misalignment effects in triple-material double-gate (TMDG) MOSFETs

摘要

In this work, a simulation based study of gate misalignment effects in triple-material double-gate (TMDG) MOSFETs is presented. An attempt is made to analyze the effects of gate misalignment on the front and back gates surface potential considering the misalignment for both the source and drain side. The surface potential profile for misaligned gate TMDG MOSFET is compared with its double and single material counterparts to predict the electrical parameters like threshold voltage roll-off. The surface potential profile is obtained through 2-D simulations by ATLAS™ from Silvaco Inc.