Properties of epitaxial AlN thin film deposited on sapphire substrate by ECR plasma

摘要

We prepared AlN film on c-plane sapphire substrate by electron cyclotron resonance plasma-enhanced sputtering deposition (ECR-sputtering). X-ray diffraction (XRD) verified the epitaxial growth of AlN films with the full width at half maximum (FWHM) of rocking curve of 0.04 deg. even on the film thickness of 100 nm. XRD also verified slight change of peak position from AlN film along both out of plane and in-plane directions.