Department of Electrical and Computer Engineering, National University of Singapore (NUS), 4 Engineering Drive 3, Singapore 117576, Republic of Singapore;
III-V; atomistic simulation; ballistic transport; ultra-thin-body;
机译:弹道III-V n-MOSFET的源极/漏极掺杂效应和性能分析
机译:缩放的III-V和Si弹道纳米MOSFET的性能比较
机译:基于IV,III-V和2-D材料的超薄体晶体管的最终性能预测
机译:弹性III-V超瘦身MOSFET的终极性能投影
机译:适用于低待机功率逻辑应用的III-V超薄InGaAs / InAs MOSFET
机译:具有纳米堆叠的高k栅极电介质和3D鳍形结构的高性能III-V MOSFET
机译:具有高移动通道的15nm栅极长度双栅极N-MOSFET的性能评估:III-V,GE和SI