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Dielectric constant of PVDF/MgO nanocomposites thin films

机译:PVDF / MgO纳米复合薄膜的介电常数

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This study investigates the effect of varying loading percentage of MgO on the dielectric constant of Poly (vinylideneflouride)/Magnesium Oxide (PVDF/MgO) nanocomposite thin films. PVDF/MgO nanocomposite spin coated thin films were successfully fabricated and characterized. PVDF and nanocomposites solutions with loading percentage of MgO at 3, 5, 7, 9, and 11% were spin coated on Al-glass substrates at 1500rpm. The optimum percentage of PVDF/MgO thin film obtained from the dielectric measurement was 7%. The dielectric constant of PVDF/Mg(7%) nanocomposite at frequency 103 Hz was 21, with low dielectric loss and absence of visible film defects, as evident by FE-SEM images. In FTIR, broad bonding peaks at 840 and 880 cm−1 can be observed. Both bonding represented the -CH2 and -CF2 groups of PVDF, which indicated high β-phase content that attributed to the increment in the dielectric constant of PVDF/MgO(7%) nanocomposite. The PVDF/MgO(7%) nanocomposite is favorable for low frequency electronic application such as capacitor.
机译:这项研究调查了变化的MgO百分比对聚偏氟乙烯/氧化镁(PVDF / MgO)纳米复合薄膜介电常数的影响。成功制备并表征了PVDF / MgO纳米复合旋涂薄膜。将MgO的负载百分比分别为3、5、7、9和11%的PVDF和纳米复合材料溶液以1500rpm的速度旋涂在Al-玻璃基板上。通过介电测量获得的PVDF / MgO薄膜的最佳百分比为7%。由FE-SEM图像可以看出,PVDF / Mg(7%)纳米复合材料在10 3 Hz频率下的介电常数为21,介电损耗低,没有可见的膜缺陷。在FTIR中,可以观察到在840和880cm -1 的宽键合峰。两种键均代表PVDF的-CH 2 和-CF 2 基团,表明β相含量较高,这归因于PVDF / MgO介电常数的增加( 7%)纳米复合材料。 PVDF / MgO(7%)纳米复合材料有利于低频电子应用,例如电容器。

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