Prospects for a BiCFET III-V HBT Process

摘要

While complementary FETs are routinely available in BiCMOS processes, the successful integration of HBTs with complementary FETs has not been reported. In this work, we demonstrate a material structure and process capable of allowing HBTs plus n and p-channel MESFETs. We report on the DC and AC characteristics of the HBT and the p-FET DC performance. The n-FET is unaffected by this material design.