Ferroelectric properties of PZT and PLZT films on Si substrate with ITO buffer layer

机译：具有ITO缓冲层的Si衬底上PZT和PLZT薄膜的铁电性能

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PZT and PLZT films on Si substrates were deposited to realize electro-optic modulators on LSI chip. The coercive field and remnant polarization of PZT and PLZT film were 148kV/cm and 50µC/cm², 170kV/cm and 32µC/cm², respectively.

机译：在Si衬底上沉积PZT和PLZT膜，以在LSI芯片上实现电光调制器。 PZT和PLZT薄膜的矫顽场和残余极化分别为148kV / cm和50µC / cm ^{2 ，170kV / cm和32µC / cm ^{2 。}}

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来源
《2012 IEEE 9th International Conference on Group IV Photonics.》|2012年|p.237- 239|共3页
会议地点 San Diego CA(US)
作者
Matsumoto Masaki; Ebuchi Shingo; Maruyama Takeo; Iiyama Koichi;
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作者单位

Natural Science and Technology, Kanazawa University, Kakuma, Ishikawa, 920-1192 Japan;

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原文格式 PDF
正文语种 eng
中图分类材料;
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专利

1. Improved ferroelectric properties of (100)-oriented PZT thin films deposited on stainless steel substrates with La_(0.5)Sr_(0.5)CoO_3 buffer layers [J] . Hongfang Li, Susu Wang, Jie Jian, Journal of materials science . 2018,第17期

机译：具有La_（0.5）Sr_（0.5）CoO_3缓冲层的不锈钢衬底上沉积的（100）取向PZT薄膜的铁电性能得到改善
2. Stress Control and Ferroelectric Properties of Lead Zirconate Titanate (PZT) Thin Film on Si Substrate with Buffer Layers [J] . Keisuke FUJITO, Naoki WAKIYA, Nobuyasu MIZUTANI, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2005,第9B期

机译：含缓冲层的Si衬底上钛酸锆钛酸铅（PZT）薄膜的应力控制和铁电性能
3. CRYSTAL STRUCTURE, MICROSTRUCTURE AND FERROELECTRIC PROPERTIES OF PZT (55/45) AND PZT (80-20) THIN FILMS DUE TO VARIOUS BUFFER LAYERS [J] . DONG HEON KANG, YONG JOO MAENG, SANG HYUN SHIN Ferroelectrics: Letters Section . 2001,第1a4期

机译：由于不同的缓冲层，PZT（55/45）和PZT（80-20）薄膜的晶体结构，微结构和铁电性能
4. Ferroelectric properties of PZT and PLZT films on Si substrate with ITO buffer layer [C] . Matsumoto Masaki, Ebuchi Shingo, Maruyama Takeo, IEEE International Conference on Group IV Photonics . 2012

机译：用ITO缓冲层对Si衬底的PZT和PLZT薄膜的铁电特性
5. An investigation of the dielectric and hysteresis properties of PLZT ferroelectric and multilayer composite thin films. [D] . Dausch, David Edward. 1995

机译：PLZT铁电和多层复合薄膜的介电和磁滞特性研究。
6. Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method [O] . Seo-Hyeon Jo, Sung-Gap Lee, Young-Hie Lee 2012

机译：溶胶-凝胶法制备的PZT / BFO多层薄膜的铁电性能
7. Dielectric, ferroelectric and piezoelectric properties of sputtered PZT thin films on Si substrates: influence of film thickness and orientation [O] . Haccart T., Cattan E., Remiens D. 2002

机译：Si衬底上溅射PZT薄膜的介电，铁电和压电特性：膜厚和取向的影响

Ferroelectric properties of PZT and PLZT films on Si substrate with ITO buffer layer

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