Non-destructive testing of through silicon vias by high-resolution X-ray/CT techniques

摘要

Detecting through silicon via (TSV) associated defects non-destructively immediately after the fabrication process, or in failure analysis is of great interest and is a challenge. This paper reports on the inspections of 5 to 30 μm diameter TSVs by the state-of-the-art, commercially available X-ray systems, exemplifying a generally preferred method for non-invasively identifying metallization defects in vias as well as in joining structures. The principle of X-ray imaging for TSV measurement is discussed and illustrated, and three dimensional TSV structures are reconstructed by computed tomography (CT). Methods to achieve high-resolution TSV X-ray imaging are discussed.