High-resolution X-ray computed tomography of through silicon vias for RF MEMS integrated passive device applications

摘要

This paper presents our exploration of microfocus and high-resolution X-ray computed tomography (CT) on open high-aspect ratio through Silicon via (TSV) test structures, the interior wall covered with a similar to 10 mu m thick conformal Cu plating, using state-of-the-art and commercially available X-ray systems. Goal of our research is to better understand the physical failure mechanisms of defective open TSVs, in order to further improve the yield of TSV production for integrated passive devices (IPD) to be used in radio frequency microelectromechanical system (RF MEMS) applications.