High frequency noise potentialities of reported CMOS 65 nm SOI technology on flexible substrate

摘要

In this paper, high frequency (HF) noise performance of 65nm SOI n-MOSFETs, initially fabricated on rigid substrate and subsequently reported on flexible substrate (plastic), is presented for the first time. AC and noise performance is extracted from S-parameters measurements performed up to 110 GHz and noise measurements in 6–40 GHz frequency range, respectively. Almost no degradation has been observed between the S parameters measured on SOI rigid 65 nm transistors (referred as Rigid SOI-MOS) and the same thinned transistors transfer-bonded on a flexible substrate (referred to as Flex SOI-MOS). For Flex SOI-MOS, a minimum noise figure (NFmin) as low as 1.1 dB is achieved at 20 GHz, along with an associated gain (Ga) of 14.5 dB, when the transistor is biased at Vds=1.2V and Ids=270 mA/mm: so far, this performance constitutes the best reported one for flexible electronics.