Modeling and separate extraction of bias-dependent and bias-independent S/D resistances in MOSFETs

摘要

S/D resistance extraction is important in technology development to help extraction of channel carrier mobility and pinpoint the bottleneck of MOSFET performance. In this paper, a new method is proposed for accurate extraction of bias-dependent and bias-independent S/D resistances of advanced MOSFETs. This method is carried on an n-MOSFET with W/L=9um/60nm, and the results fit the experimental data accurately.