MOSFET MODEL AND PARAMETER EXTRACTION METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To easily obtain a MOSFET model for circuit simulation, which highly accurately simulates the MOSFET of power application, and to easily extract its parameter in a short period of time.;SOLUTION: The MOSFET model consists of: a SPICE model of MOSFET; and a voltage dependent variable capacitor which is connected between electrode terminals of the SPICE model of the MOSFET. The capacitance Cdg between a drain and gates of the MOSFET of the variable capacitor is extracted from an actual measurement value of an output voltage Vds between the drain and the sources of the MOSFET in a mirror period of turn-off of the MOSFET, and is corrected.;COPYRIGHT: (C)2010,JPO&INPIT