DEVICE MODEL OF MOSFET AND PARAMETER EXTRACTION METHOD

摘要

PURPOSE: To provide a high-accuracy modeling method in a wide gate-voltage region and in a wide gate-length range as the drain current model of a MOSFET, for current simulation, which is used to design an LSI. ;CONSTITUTION: A drain current is expressed by an analytical-expression model whose constituent elements are composed of a mobility which is dependent on a threshold voltage, on a diffused layer resistivity and on a gate voltage and of a gate-diffusedlayer overlap length which is dependent on the gate voltage. In a parameter extraction method, a model parameter for the constituent elements is decided in such a way that the gate-voltage-dependence of the inclination ρ of channel resistance-to-gate length dependence near a part at a drain voltage of zero and of a channel resistance γ at a gate length of zero is measured, that the mobility is decided by the reciprocal number of diffused-layer resistivities γ_o, ρ at ρ of zero and that the gate-diffused-layer overlap length is decided by an expression of (γ-γ_o)Vge/ρ.;COPYRIGHT: (C)1995,JPO