The features of temperature dependence pc(T) in ohmic contacts to n-GaN (n-AlN) with high dislocation density

摘要

We studied temperature dependences of resistivity ρc(T) of Pd-Ti-Pd-Au ohmic contacts to wide-gap semiconductors n-GaN and n-AlN with high dislocation density. The obtained dependences cannot be explained by the existing mechanisms of current flow. We propose possible mechanisms explaining the experimental ρc(T) curves for ohmic contacts to n-GaN and n-Al N.