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A Comparison of Copper Sulfate and Methanesulfonate Electrolytes in the Copper Plating Process for Through Silicon Via Metallization

机译:硅通孔金属化镀铜过程中硫酸铜和甲磺酸盐电解质的比较

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摘要

In this study, authors studied and compared the behaviors of the additives in copper sulfate and cupric methanesulfonate electrolytes by means of electrochemical measurement method with a rotary electrode. The electrochemical parameters including exchange current density and cathodic transfer coefficient of the electrolytes were successfully determined utilizing linear sweep voltammetry. Chronoamperometry (CA) was conducted to verify the diffusion time of additives to the surface of electrodes and the corresponding diffusion constants were characterized. Copper plating of 50/200 urn TSVs was achieved with copper sulfate and cupric methanesulfonate electrolytes respectively. The plated surface morphologies were studied using Scanning Electron Microscopy (SEM).
机译:在这项研究中,作者通过旋转电极的电化学测量方法研究并比较了添加剂在硫酸铜和甲磺酸铜电解质中的行为。利用线性扫描伏安法成功地确定了包括交换电流密度和电解质的阴极转移系数在内的电化学参数。进行计时安培法(CA)验证添加剂在电极表面的扩散时间,并表征了相应的扩散常数。用硫酸铜和甲磺酸铜电解质分别镀了50/200 TSV。使用扫描电子显微镜(SEM)研究了镀层的表面形态。

著录项

  • 来源
  • 会议地点 Xiamen(CN)
  • 作者单位

    EPACK Lab, Center for Advanced Microsystems Packaging, Hong Kong University of Science Technology Clear Water Bay, Kowloon, Hong Kong;

    EPACK Lab, Center for Advanced Microsystems Packaging, Hong Kong University of Science Technology Clear Water Bay, Kowloon, Hong Kong;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 TN405.94;
  • 关键词

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