Study of 1/f and generation-recombination noise in four gate transistors

摘要

In this work, we study different noise sources that are present in four-gate field-effect-transistors (G4-FET). We present a model for the generation-recombination (g-r) noise due to traps located in the depletion regions and in the bulk, and for the 1/f noise due to traps in the top and bottom oxides. One of the main advantages of this structure is that the position and size of the conduction channel can be controlled by the application of adequate voltages to its gates (front and back MOS gates and two lateral JFET gates). However, the channel is also prone to be affected by the noise sources distributed throughout the device. Thus, the current noise power spectral density is a combination of all these noise sources. Experimental data showing such a combination are interpreted with our model.