Accessibility of nano-crossbar arrays of resistive switching devices

摘要

This paper discusses the accessibility of nano-crossbar arrays of resistive switching devices, using both analytical approaches and statistical simulations. Voltage configurations of the wordlines and bitlines in crossbar arrays play a critical role on sensing margin, disturbance, and power efficiency. Access resistance to the array affects the actual line voltage and degrades the sensing margin. Nonlinearity in switching device characteristics may improve accessibility of crossbar arrays.