Benchmarking of HBT models for InP based DHBT modeling

机译：基于InP的DHBT建模的HBT模型基准测试

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In this paper the modeling results of a given InP/InGaAs/InP DHBT technology (0.7×7 µm emitter area) have been shown with two advanced compact models, HICUM L0 and Agilent HBT. Shortcomings of these models have been pointed out and their suitability for modeling these high frequency devices has been discussed.

机译：本文使用两种先进的紧凑型模型HICUM L0和Agilent HBT展示了给定的InP / InGaAs / InP DHBT技术（0.7×7 µm发射极面积）的建模结果。指出了这些模型的缺点，并讨论了它们对这些高频设备建模的适用性。

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来源
《2010 27th International Conference on Microelectronics Proceedings》|2010年|p.399-402|共4页
会议地点 Nis(RS);Nis(RS)
作者
Ghosh S.; Zimmer T.; Ardouin B.; Maneux C.; Fregonese S.; Marc F.; Grandchamp B.; Kone G. A.;
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IMS Laboratory, University Bordeaux 1, 33405 Talence, CNRS UMR 5218, France;

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原文格式 PDF
正文语种 eng
中图分类微模组件;
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1. Small-signal modeling of Emitter-up HBT using an improved analytical approach. Application to InGaAlAs/GaAsSb/InP DHBT with strained base [J] . A. Oudir, M. Mahdouani, S. Mansouri, Solid-State Electronics . 2010,第1期

机译：使用改进的分析方法对发射极HBT进行小信号建模。应变碱在InGaAlAs / GaAsSb / InP DHBT中的应用
2. Improved External Base Resistance Extraction for Submicrometer InP/InGaAs DHBT Models [J] . Johansen T. K., Krozer V., Nodjiadjim V., Electron Devices, IEEE Transactions on . 2011,第9期

机译：亚微米InP / InGaAs DHBT模型的改进的外部基极电阻提取
3. Impact of surface state modeling on the characteristics of InP/GaAsSb/InP DHBTs [J] . N.G. Tao, H.G. Liu, C.R. Bolognesi Solid-State Electronics . 2007,第6期

机译：表面状态建模对InP / GaAsSb / InP DHBTs特性的影响
4. Benchmarking of HBT Models for InP Based DHBT Modeling [C] . S. Ghosh, T. Zimmer, B. Ardouin, International Conference on Microelectronics . 2010

机译：基于INP的DHBT模型的HBT模型基准测试
5. Highly Scaled InP/InGaAs DHBTs Beyond 1 THz Bandwidth [D] . Rode, Johann Christian 2015

机译：超过1 THz带宽的大规模InP / InGaAs DHBT
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7. Improved External Base Resistance Extraction for Submicrometer InP/InGaAs DHBT Models [O] . Johansen Tom Keinicke, Krozer Viktor, Nodjiadjim Virginie, 2011

机译：改进的亚微米Inp / InGaas DHBT模型的外部基极电阻提取
8. Common base amplifier with 7-dB gain at 176 GHz in InP mesa DHBT technology [R] . Paidi, V., Griffith, Z., Wei, Y., 2004

机译：采用Inp台面DHBT技术，在176 GHz时具有7 dB增益的共基极放大器

Benchmarking of HBT models for InP based DHBT modeling

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