首页> 外文会议>2006 Proceedings Twenty Third International VLSI Multilevel Interconnection Conference(VMIC) >LASER SPIKE ANNEALING: A NOVEL POST-POROSITY TREATMENT FOR TOUGHENING OF LOW-K ORGANOSILICATES
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LASER SPIKE ANNEALING: A NOVEL POST-POROSITY TREATMENT FOR TOUGHENING OF LOW-K ORGANOSILICATES

机译:激光峰值退火:用于低钾有机硅强化的新型后气孔处理

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In summary, initial results for the laser thermal treatment of organosilicates indicate that with respect to increasing the modulus and minimum sacrifice of the dielectric constant, significant improvements are possible. Of course, this occurs with some shrinkage, particularly in the case of porous materials, typically 10-15 %. Future work will focus on the stresses that may be generated during these high temperature excursions. The use of LSA for post-porosity mechanical enhancement of high porosity, low-k dielectric films offers a viable and attractive alternative to e-beam and UV/thermal methods. With unoptimized fivefold improvements in the modulus and sacrificing only ~ 10% in the dielectric constant, LSA has the potential to outperform current mechanical enhancement methods. Of course, the fact that this approach offers the possibility of spatial addressability, presents opportunities for other potential applications. Additional advantages may present themselves considering that the tool associated with this process is also of great utility for FEOL processes, such as thermal dopant diffusion.
机译:总而言之,对有机硅酸盐进行激光热处理的初步结果表明,就增加模量和最小牺牲介电常数而言,可能会有重大改善。当然,这会发生一些收缩,特别是在多孔材料的情况下,通常为10-15%。未来的工作将集中在这些高温偏移过程中可能产生的压力上。将LSA用于高孔隙率,低k介电膜的孔隙后机械增强,为电子束和UV /热法提供了可行且有吸引力的替代方法。由于模量的未优化提高了五倍,并且介电常数仅降低了约10%,因此LSA的性能可能胜过当前的机械增强方法。当然,这种方法提供了空间寻址能力的事实,为其他潜在应用提供了机会。考虑到与此工艺相关的工具在FEOL工艺中也具有很大的用途,例如热掺杂剂扩散,可能会带来其他优势。

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