Study of the Chamber Process Kit Impact on Temperature Characterization for Hot Metal Deposition Process

摘要

This paper describes the criticality in the measurement methodology used during the temperature characterization of the High Temperature High Uniformity (HTHU) heaters assembled in controlled manufacturing environment. In addition to the Applied Materials (AMAT) supplier performed testing, it is common for the customer to test the heater upon receipt. A K-type thermo-couple embedded wafer (TC wafer) is used to test the product at either source or destination location. A K-Type TC wafer can detect the temperature from 100C to 800C with an accuracy of +/- 0.5C. Depending on the customer and relative process, the test configuration at the HTHU destination can vary from a chamber equipped to perform out-gassing, using a perforated shield for increased pumping efficiency and a stainless steel blank-off at the source, to another configuration designated for metal deposition, which has a solid shield assembly and a source target of Aluminum- 0.5% Copper. The TC wafer is a polished silicon substrate and is used with corresponding software to analyze the temperature characteristics of a HTHU. Each heater is supplied from the vendor with the "C0" offset. Usually the "C0" value is not altered once the heater is manufactured and tested by the manufacturer. This "C0" offset is updated in the Endura software before characterizing the heater. The HTHU heater capability specification from the AMAT supplier defines the thermal heating shall be ±50C at 500C setpoint, with a deviation no greater than 15C across the heater surface. This temperature setpoint and actual heater temperature is very critical since it controls the out gassing in the contact and via openings. The heater temperature also controls the flow of aluminum film during deposition across the wafer. Any shift in the temperature gradient may cause a shift in the contact or via resistance or a shift in the metal resistance value.