首页> 外文会议>2006 Proceedings Twenty Third International VLSI Multilevel Interconnection Conference(VMIC) >Improved Manufacturability of Cu Bond Pads and Implementation of Seal Design in 3D Integrated Circuits and Packages
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Improved Manufacturability of Cu Bond Pads and Implementation of Seal Design in 3D Integrated Circuits and Packages

机译:改进的Cu焊盘的可制造性以及3D集成电路和封装中的密封设计实现

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In this paper we investigated the effect of Cu bonding quality on inter-level via structural reliability for 3D manufacturing applications. We developed a Cu bond pad structure and fabrication process for improved bonding quality by recessing oxides using a combination of SiO_2 CMP process and dilute HF wet etching. In addition, in order to achieve improved wafer-level bonding, we introduced a seal design concept that prevents corrosion and provides extra mechanical support. Demonstrations of these concepts and processes prove the feasibility of reliable and manufacturable 3D integrated circuits and packages.
机译:在本文中,我们通过3D制造应用的结构可靠性研究了铜键合质量对中间层的影响。我们开发了一种铜键合焊盘的结构和制造工艺,以通过结合使用SiO_2 CMP工艺和稀HF湿法刻蚀使氧化物凹陷来提高键合质量。此外,为了实现改善的晶圆级键合,我们引入了一种密封设计概念,该概念可防止腐蚀并提供额外的机械支撑。这些概念和过程的演示证明了可靠且可制造的3D集成电路和封装的可行性。

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