Study on the Reliability of Capacitive Shunt RF MEMS Switch

摘要

Study on the reliability of capacitive shunt RF MEMS switch is present. The electrical failure and mechanical failure mechanism is analyzed separately. In the electrical failure analysis', the breakdown of dielectric between up- and down-electrode is measured and analyzed. In the measurement, a ramping DC voltage of 5Vs~(-1) is applied and different breakdown voltages are obtained. For the switches with electrode roughness of 27.4nm, 16.0nm and 5.4nm, the breakdown event maximum is in the voltage ranges of 20～40V, 30～60V and 80～110V respectively. In the mechanical failure analysis, the failure induced by stress is analysis. The failure samples of A1 membrane broken and buckling are present. The best stress in Al membrane is at the range of 10～20MPa.