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SPDT RF MEMS switch using a single bias voltage and based on dual series and shunt capacitive MEMS switches

机译:使用单个偏置电压并基于双串联和并联电容MEMS开关的SPDT RF MEMS开关

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摘要

A coplanar waveguide (CPW) single-pole double-throw (SPDT) X-band RF MEMS switch that can be actuated between states by applying a single voltage is introduced. Since a signal can be transmitted to one of the output ports without biasing, this has the potential to reduce the complexity of the required biasing network. The switch consists of a series and a shunt capacitive MEMS switch separated by a quarter wavelength transmission line. The shunt switch section was fabricated and measured separately and shown to have an insertion loss of 0.25 dB and isolation of 33 dB at 10 GHz. A SPDT 3-port switch was fabricated and port isolations of about 15 dB and an insertion loss of 1 dB were obtained in the up-state. In the down-sate, 40 dB of isolation with a 1 dB insertion loss were measured. The actuation voltage was 35 V.
机译:介绍了一种共面波导(CPW)单刀双掷(SPDT)X波段RF MEMS开关,该开关可以通过施加单个电压在状态之间进行致动。由于信号可以在没有偏置的情况下传输到输出端口之一,因此有可能降低所需偏置网络的复杂性。该开关由串联的和并联的电容式MEMS开关组成,该开关由四分之一波长的传输线隔开。分流开关部分是单独制造和测量的,在10 GHz时插入损耗为0.25 dB,隔离度为33 dB。制作了SPDT 3端口开关,在向上状态下获得了约15 dB的端口隔离和1 dB的插入损耗。在下行通道中,测量了40 dB的隔离度和1 dB的插入损耗。激励电压为35V。

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    Ketterl T.; Weller T.;

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  • 年度 2005
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