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3D Wafer Level Packaging

机译:3D晶圆级封装

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摘要

IC packaging continues to be driven to miniaturization not only in footprint (area of board space used) but also in package thickness or height. Reducing package thickness requires creating a thinner wafer or chip and a new concept of vertical integration of chips. The main technical obstacle to mass production of high density 3D modules is the challenge of forming die interconnections within a vertical stack. A manufacturer currently has to link them over the die edges; these over-edge interconnections are more art than science, and are barely automated, unreliable, and extremely cost-inefficient. A new Thru-Silicon manufacturing technology, based on Atmospheric Downstream Plasma (ADP) etching, allows for the interconnection of two or more wafers in a vertical stack The ADP thinning process provides, in one step, not only thinner wafers but also back-side contacts. The natural etch selectivity of ADP processing allows for the simple formation of Thru-Silicon interconnections. Process results and plans for 3D WLP stacks composed of memory, processors, control logic, and sensors for a wide variety of applications are presented.
机译:IC封装不仅在占地面积(使用的电路板面积)上,而且在封装厚度或高度上,都继续被迫实现小型化。减小封装厚度需要制造更薄的晶片或芯片以及芯片垂直集成的新概念。大规模生产高密度3D模块的主要技术障碍是在垂直堆栈中形成管芯互连的挑战。当前,制造商必须将它们链接在模具边缘上。这些边缘互连比艺术还具有更多的艺术性,并且几乎没有自动化,不可靠且成本极低。一种基于大气下游等离子体(ADP)蚀刻的新型Thru-Silicon制造技术,可将垂直堆叠中的两个或更多个晶片互连。ADP减薄工艺不仅一步一步提供了更薄的晶片,而且还提供了背面联系人。 ADP处理的自然蚀刻选择性允许Thru-Silicon互连的简单形成。提出了3D WLP堆栈的处理结果和计划,该堆栈由用于各种应用的内存,处理器,控制逻辑和传感器组成。

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