2-6 GHZ Gaas Mmic Power Amplifier

摘要

Design approach and performance of ion-implant broadband MMIC power amplifier using 0.5 mum gate length FET is reported. The lossy match MMIC amplifier is designed and optimized with nonlinear Root model. The amplifier has better than 3:1 bandwidth, 1 to 1.4 watt CW output power, and greater than 20 percent power-added efficiency (PAE) across the 2-6.7 GHz frequency band. The linear gain is 17 dB with a flatness of 0.75dB. Input/output VSWRs are better than 2:1. The chip size is O.1mmX2.6mmX2.7mm.