Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, University of Chinese Academy of Sciences, Beijing, China;
Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, University of Chinese Academy of Sciences, Beijing, China;
Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, University of Chinese Academy of Sciences, Beijing, China;
Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, University of Chinese Academy of Sciences, Beijing, China;
Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, University of Chinese Academy of Sciences, Beijing, China;
Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, University of Chinese Academy of Sciences, Beijing, China;
Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, University of Chinese Academy of Sciences, Beijing, China;
Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, University of Chinese Academy of Sciences, Beijing, China;
Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, University of Chinese Academy of Sciences, Beijing, China;
Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Australia;
Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Australia;
Power line communications; Electric fields; Doping; Silicon carbide; Logic gates; Switching loss; Junctions;
机译:高频开关特性和低氧化物电场和逆向通道4H-SIC UMOSFET中的能量损失
机译:具有杂连接二极管的新型4H-SiC超结Umosfet,用于增强反向恢复特性和低开关损耗
机译:一种新型 的4H-SiC 超级结 UMOSFET 与 异质结 二极管 的 增强型反向 恢复 特性和低 开关损耗
机译:用埋藏的P副芯片为低氧化物电场和开关损耗模拟短通道4H-SIC UMOSFET
机译:使用相场方法对铁电畴结构和开关进行计算机模拟。
机译:低关断损耗的4H-SiC沟槽绝缘栅双极晶体管的仿真研究
机译:4H-siC外延层氧化诱导断层的光致发光研究