Overview of FeRAM Technology for High Density Applications

摘要

Ferroelectric memories (FeRAMs) are new types of memories especially suitable for mobile applications due to their unique properties like non-volatility, small DRAM-like cell size, fast read and write as well as low voltage/low power behavior. Although standard CMOS processes can be used for frontend and backend processes, FeRAM technology development has to overcome major challenges due to new materials used for capacitor formation. This work gives an overview of SrBi_2Ta_2O_9 (SBT) thin films capacitor processing using Pt as electrode material as well as results for integration of the capacitor process into a 0.5 μm CMOS process with 2-layer tungsten/ aluminum metallization. Also, stacked capacitor results are given.