FeRAM technology for high density applications

摘要

Ferroelectric random access memories (FeRAMs) are new types of memories especially suitable for mobile appli- cations due to their unique properties like nonvolatility, small DRAM-like cell size, fast read and write as well as low voltage/low power behavior. Although standard COMOS processes can be used for frontend and backend/metallization processes, FeRAM technology development has to overcome major challenges due to new materials used for capacitor formation.