首页> 外文会议>1st International Display Manufacturing Conference on IDMC 2000, 1st, Sep 5-7, 2000, Seoul, Korea >Field Emission Properties of Vertically Aligned Carbon Nanotubes Dependent Upon Gas Exposures and Growth Conditions
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Field Emission Properties of Vertically Aligned Carbon Nanotubes Dependent Upon Gas Exposures and Growth Conditions

机译:垂直排列的碳纳米管的场发射特性取决于气体暴露量和生长条件

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Vertically aligned carbon nanotubes have been grown with different growth conditions by microwave plasma chemical vapor deposition and thermal chemical vapor deposition. The field emission properties of such grown carbon nanotubes are studied. Carbon nanotube field emission array(CNT-FEA) under high bias voltage is exposed to hydrogen, nitrogen, and oxygen. After each exposure, changes on turn-on voltage and slope of Fowler-Nordheim plots are observed. It is observed that saturation of emission current is contributed by adsorbates on the surface of carbon nanotube emitters. Due to high electron affinity, oxygen and nitrogen degrade field emission properties, whereas the effects of nitrogen are less severe. However, emission properties are enhanced at hydrogen exposures by removing adsorbates with hydrogen atoms.
机译:通过微波等离子体化学汽相沉积和热化学汽相沉积已经在不同的生长条件下生长了垂直取向的碳纳米管。研究了这种生长的碳纳米管的场发射特性。高偏压下的碳纳米管场发射阵列(CNT-FEA)暴露于氢,氮和氧。每次曝光后,观察到Fowler-Nordheim图的开启电压和斜率的变化。观察到,发射电流的饱和是由碳纳米管发射器表面上的吸附物引起的。由于高的电子亲和力,氧和氮降低了场发射性能,而氮的影响则不那么严重。然而,通过去除氢原子上的吸附物,在暴露于氢的情况下,发射性能得到了增强。

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