A Model of Photoelectric Phenomena in MOS Structures at Low Electric Fields

摘要

This paper presents a new model of photoelectric phenomena taking place in MOS structures at low electric fields in the dielectric. Solutions of model's equations are analyzed and discussed. Using these solutions various photoelectric characteristics are calculated and compared with their counterparts taken experimentally. Excellent agreement between calculated and experimental characteristics, obtained for a wide range of different MOS structures, strongly supports the validity of the model. Applicability limits of this model are illustrated and discussed. The model finds applications in developing new, highly precise, photoelectric measurement methods of MOS structures. Two such methods are mentioned in this paper. One of these methods has already been fully verified and has been successfully used in various investigations, while the other is currently being verified and optimized.