Fabrication of Au/PZT/BIT/Si heterostructure by pulsed-laser deposition

摘要

Abstract: The MFS heterostructures with structure of Au/PZT/p-Si and Au/PZT/BIT/p-Si were fabricated using pulsed laser deposition technique. The PZT ferroelectric thin films were deposited directly on Si or with a BIT buffer layer. P-E hysteresis loop, capacitance-voltage characteristics and current-voltage characteristics of the heterostructures were measured respectively. The results are performed and discussed.!8