METAL INDUCED CRYSTALLIZATION OF AMORPHOUS SILICON

摘要

Metal induced erystallization of amorphous silicon (a-Si) has been studied for a thin Ni layer on the a-Si. The NiSh precipitates, nuclei for the crystallization, can be formed at less than 400 deg C on the a-Si. The growth of the needlelike crystallites, as a result of the migration of NiSi_2 precipitates through a-Si, proceeds to <111> directions with <110> normal to the film surface. The crystallization velocity of a-Si is greatly enhanced and thus the crystallization temperature is lowered by applying an electric field to the a-Si High-quality polycrystalline silicon having needlelike crystallites can be formed at temperatures as low as 400 deg C.