Silicon-Based Solar Cell Fabricated by Metal-Induced Lateral Crystallization of Amorphous Silicon Film

摘要

Silicon-based polycrystalline solar cells are first fabricated by metal-induced lateral crystallization in which n-type polycrystalline-silicon (poly-Si) films, processed using nickel-induced amorphous silicon, are grown on p-silicon substrate at 550℃ by furnace annealing. The fabricated n-type poly-Si/p-substrate solar cell exhibits a conversion efficiency of 10.4% and an open-circuit voltage of 0.54 V without any passivation or antireflection coating layers.