High-Reliability Self-Aligned InGaP/GaAs HBTs for Lightwave Communications

摘要

The development of advanced IC technologies is a key factor in high-speed lightwave communication systems, operating at over 10-Gb/s. III-V based heterojunction bipolar transistor (HBT) ICs are very promising candidates because of their excellent high-speed characteristics.) However, when applying HBTs to lightwave communications which require long-term reliability, a reduction in the current gain, β, during operation) becomes a serious problem.